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| SMD Type Silicon PNP Epitaxial 2SA1122 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Transistors IC Unit: mm Features +0.1 2.4-0.1 +0.1 1.3-0.1 Low frequency amplifier 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Rating -55 -55 -5 -100 150 150 -55 to +150 Unit V V V mA mW Electrical Characteristics Ta = 25 Parameter Collector to base breakdown voltage Collector to emitter breakdown voltage Emitter to base breakdown voltage Collector cutoff current Emitter cutoff current DC current transfer ratio Collector to emitter saturation voltage Base to emitter voltage Symbol Testconditons Min -55 -55 -5 -0.5 -0.5 160 800 -0.5 -0.75 V V Typ Max Unit V V V iA iA V(BR)CBO IC = -10 iA, IE = 0 V(BR)CEO IC = -1 mA, RBE = V(BR)EBO IE = -10 iA, IC = 0 ICBO IEBO hFE VCE(sat) VBE VCB = -30 V, IE = 0 VEB = -2 V, IC = 0 VCE = -12 V, IC = -2 mA IC = -10 mA, IB = -1 mA VCE = -12 V, IC = -2 mA hFE Classification Marking hFE CC 160 320 CD 250 500 CE 400 800 +0.1 0.38-0.1 0-0.1 www.kexin.com.cn 1 |
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